Dynamic Focus Adjustment with Optical Height Detection Apparatus in Electron Beam System

ABSTRACT

The present invention generally relates to dynamic focus adjustment for an image system. With the assistance of a height detection sub-system, present invention provides an apparatus and methods for micro adjusting an image focusing according the specimen surface height variation by altering the field strength of an electrostatic lens between objective lens and sample stage/or a bias voltage applied to the sample surface. Merely by way of example, the invention has been applied to a scanning electron inspection system. But it would be recognized that the invention could apply to other system using charged particle beam as observation tool with a height detection apparatus.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.12/764,902, filed on Apr. 21, 2010, the entire contents of which areincorporated herein by reference.

FIELD OF THE INVENTION

The present invention generally relates to an electron beam system, andmore particularly to a device for dynamic measuring height variation ofa specimen to be inspected by a tool and a method for dynamic adjustingthe focus of an electron beam image while inspecting a specimen.

BACKGROUND OF THE INVENTION

As semiconductor devices move toward higher integration and density withadvances in semiconductor materials and processes, the critical defectsize becomes smaller. This requires defect inspection tool, especiallyElectron Beam (e-beam) defect inspection tool has higher resolution andhigher inspection speed. Thus, more accurate and fast auto-focus abilitybecomes more important.

A typical e-beam defect inspection tool projects electron beam onto thesuspected area, collects the scattered or reflected electrons emanatedform the surface of a specimen to form image of the inspected area, andthen exports the position of the image anomalies. In order to have agood quality of surface image, the resolution of the inspection tool andthe ability to keep good focus status. Higher resolution results insmall depth of focus (DOF), thus require better and faster focus controlcapability.

After a sharp image is acquired from an wafer surface by using, forexample e-beam inspection tool, anomaly analysis requires a lot of imageprocessing techniques. There are several factors affect wafer surfacetopology for example vertical position and tilt angle. However, the mostimportant three may be first, the wafer intrinsic flatness; second, theIC manufacturing induced surface tension and surface roughness; andthird, the processing tool for example wafer chuck or x-y translationstage induced wafer warping and tilting. The surface topology is easy tocause the image off focus if no support of auto focus/work distancecontrol system. Without precise knowledge of the vertical position anddynamic adjustment, the image will be blurred due to not enough DOF andsurface topology variation. To present a sharp image while performingcontinuous inspection, the e-beam system has to adjust the magneticfield of the objective lens in time by changing the current flow throughthe coil of the objective lens. However, because of the hysteresiseffect, the responding time of altering the focus by varying the lenscurrent is too slow compared to the sample moving speed; thus theacquired image is obscure after image processing. Example of varyingfocus current is illustrated in U.S. Pat. No. 5,502,306 to Meisburger etal. The optimum focus current of a few designated points on specimen isdetermined in the initialization stage and for any points in betweenthese one may interpolate the desired focus current. Another method tokeep the image sharp was disclosed in U.S. Pat. No. 7,041,976 by Neil etal. The method automatically focuses an electron image by varying wafersurface bias which is correspondingly determined by the energy filtercut-off voltage of the scattered electrons.

Systems used to manufacture semiconductor devices such as processingtools, metrology tools, and inspection tools may include a height sensoras a focusing sub-system. A height sensor may be used to position awafer within a system prior to or within the processing of the wafer.Height sensors may be used in different configurations for differentapplications.

Example of height sensor as illustrated in U.S. Pat. No. 4,538,069 toShambroom et al. utilizes capacitance height sensor in lithographymachine. The control system appropriately adjusts the deflection angleof the electron beam in response to the detected deviation to write atthe desired point of the reticle with a very high degree of accuracy.However, the accurate reading of the capacitance gage requires a uniformspecimen material. The complicate material compositions on asemiconductor wafer become a disadvantage of capacitance gage. Someheight sensors detect the scattered light and convert the detected lightinto electrical signals that may be measured to provide heightinformation. Examples of such height sensors are illustrated in U.S.Pat. No. 5,585,629 to Doran et al. Determine position deviation withdual beam optical LED. Output from the system enable adjustment of finepositioning stage; U.S. Pat. No. 6,333,510 to Watanabe et al. Determineheight with dual beam optical system and apply the scale factor toadjust the focus of objective lens, and U.S. patent application Ser. No.11/759,138 to Wang et al, Determine height with an optical system andadjust focal point by controlling Piezo-electric of the stage. All ofwhich are incorporated by reference as if fully set forth herein. Thedisadvantage of implement height variation to adjust stage motion invertical direction is that motions become a new vibration source of theimaging system. And the disadvantage of implement height variation toadjust objective lens exciting current is slow due to the hysteresiseffect of the magnetic field in the objective lens.

The object of the present invention is to provide methods and apparatusto avoid the stage motion on the vertical direction and introduce a fastresponded electrostatic field during dynamic focusing for wafercontinuous e-beam defect inspection.

BRIEF SUMMARY OF THE INVENTION

The present invention generally relates to dynamic focus adjustment foran image system. With the assistance of a height detection sub-system,present invention provides an apparatus and methods for micro adjustingan image focusing according the specimen surface height variation byaltering the field strength of an electrostatic lens between objectivelens and sample stage/or a bias voltage applied to the sample surface.Merely by way of example, the invention has been applied to a scanningelectron inspection system. But it would be recognized that theinvention could apply to other system using charged particle beam asobservation tool with a height detection apparatus.

The height sensing apparatus of the present invention was adopted fromWang et al. U.S. patent application Ser. No. 11/759,138, filed Jun. 6,2007. According to an embodiment of the present invention, the controlsignal in voltage convert from the height variation is sent to anelectrode between the objective lens and the sample stage. The electrodeis acted as an electrostatic lens to micro-adjust the focus point of theprimary beam.

According to another embodiment of the present invention, the controlsignal in voltage convert from the height variation is sent to thesample stage. The specimen surface bias is varied according to thecontrol signal. Thus varies the landing energy of the incident electronsthereafter varies the focus point of the primary beam.

This invention provides an electron beam system, which comprises anelectron source for emitting a primary beam, a condenser lens forcondense the primary beam, an objective lens for focusing the primarybeam on a surface of a specimen, and means for measuring heightvariation of the specimen. The means for measuring height variation ofthe specimen comprises an optical illuminating source for emitting lighton the specimen, a detecting unit for receiving image of gratingreflected from the specimen, and means for varying landing energy of theprimary beam. The means for varying landing energy of the primary beammay comprise means for calculating focus of the tool, means forcalculating bias of the specimen surface, and means for controlling biasof the specimen surface. The means for varying landing energy of theprimary beam may also comprise means for calculating focus of the tool,means for calculating electrostatic strength of the control electrodewhich includes scanning correction, image rotation compensation, imagemagnification compensation, image shifting compensation, and means forcontrolling electrostatic strength of the control electrode.

This invention also provides a device for measuring height variation ofa specimen to be inspected by a tool, which comprise an opticalilluminating source for emitting light on the specimen, a detecting unitfor receiving image of grating reflected from the specimen, means forcalculating focus of the tool, means for calculating bias of thespecimen surface which includes scanning correction, image rotationcompensation, image magnification compensation, image shiftingcompensation, and means for controlling bias of the specimen surface.

This invention still provides a device for adjusting focus of anelectron beam in a scanning electron microscope (SEM), which comprisesan optical height detection unit for detecting a surface of a specimento be inspected by the SEM and outputting signals of height variationinformation, a SEM focus control unit for receiving the signals ofheight variation information, calculating focus, and outputting signalsof focus adjusting information, and a SEM focusing unit for focusing theelectron beam of the SEM on the surface of the specimen according to thesignals of focus adjusting information, wherein said SEM focusing unitis selected from the group consisting of means for adjusting bias of thespecimen's surface, a control electrostatic lens, and a condenser lens.

This invention further provides a method for dynamic adjusting the focusof an electron beam image while inspecting a specimen, which comprisessteps of providing an electron beam inspection system, wherein a controlelectrode is configured to the system and then providing an opticalillumination flux through a pattern plate and a lens to a surface of aspecimen to project a pattern onto the surface of the specimen, thepattern being associated with the pattern plate. The illumination fluxreflected from the surface of the specimen is detected with a detector.Information associated with the detected illumination flux is thenprocessed. Next, optical images based on at least information associatedwith the detected illumination flux are generated, wherein the firstimage includes a first image part for the pattern and a second imagepart for the specimen. The local height variation of the surface of thespecimen within the electron beam field of view according to theposition variation of the pattern between these optical images is thendetermined. The height variation is compared with the depth of focus ofthe electron beam image. Correction factors are calculated to compensatethe height variation respect to the depth of focus of the electron beamimage within the field of view. A control signal is generated based onat least information associated with these optical images. The controlsignal is then provided to the control object. The focus of the electronbeam image of the specimen is adjusted in response to the control signalthat apply to the control object, and an electron beam inspection forthe specimen with the new focus length is performed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a system configuration drawing of an improved Swing ObjectiveRetarding Immersion Lens (SORIL) system disclosed by Chen et al. in U.S.patent application Ser. No. 12/257,304

FIG. 1B is a system configuration drawing of a prior art e-beam systemwith height sensor sub-system that disclosed by Wang et al in U.S.patent application Ser. No. 11/759,138.

FIG. 2A is a diagrammatic representation of an e-beam system with heightsensor sub-system, where the control signal is sent to vary the specimensurface bias according to an embodiment of present invention.

FIG. 2B is a diagrammatic representation of a wafer bias/scanningcompensation calculator according to an embodiment of present invention.

FIG. 3A is a diagrammatic representation of an e-beam system with heightsensor sub-system, where the control signal is sent to a pair ofelectrodes between the objective lens and the sample stage according toan embodiment of present invention.

FIG. 3B is a diagrammatic representation of an electrostatic lensstrength/scanning compensation calculator according to an embodiment ofpresent invention.

DETAILED DESCRIPTION OF THE INVENTION

The present invention generally relates to dynamic focus adjustment foran image system. With the assistance of a height detection system,present invention provides an apparatus and methods for micro-adjustingan image focus according the specimen surface height variation byaltering the field strength of an electrostatic lens between objectivelens and sample stage or by altering a bias voltage applied to thesample surface. Merely by way of example, the invention has been appliedto a scanning electron inspection system. But it would be recognizedthat the invention could apply to other systems using charged particlebeam as observation tool with a height detection apparatus.

The system configuration of the present invention is illustrated in FIG.1A and FIG. 1B which includes a regular e-beam inspection system 150 toperform inspection and a height detection sub-system 200 to assistfocusing. Detail of the e-beam system 150 comprises electron source 110,condenser lens 112, aperture 114, detector 120, objective lens 130,deflectors 132, and control electrode 134. A primary electron beamgenerates from electron source 110 is focused into an electron beamprobe by the objective lens 130, that scans across a specimen 160 holdby the sample stage 170, such as E-chuck. Specimen 160 may be, but notlimited to, a wafer such as a substrate used for fabricatingsemiconductor devices. The detector 120 collects the secondary electronsemanating from the specimen 160 surface to form an electron beam imageafter processing. The e-beam system 150 may be, for example, an improvedSwing Objective Retarding Immersion Lens (SORIL) system disclosed byChen et al. in U.S. patent application Ser. No. 12/257,304 “An ElectronBeam Apparatus” filed in Oct. 23, 2008.

The height detection sub-system 200 is adopted from Wang et al. U.S.patent application Ser. No. 11/759,138, filed Jun. 6, 2007. The heightdetection sub-system 200 comprises an illumination light source 210, alight pattern plate 213, optical mirror system 220 a and 220 b, anoptical detection unit 230, an optical image processing unit 240, acontrol signal generating unit 250, and a control action driver 260. Theilluminated flux from the light source 210 projects the line grating onthe light pattern plate 213 through condenser lens and reflecting mirrorof the optical mirror system 220 a onto specimen 160 surface. Thereflected line grating image from the specimen 160 surface is passedthrough reflecting mirror and filter of the optical mirror system 220 binto the optical detection unit 230. The optical detection unit 230 maybe, but not limited to, a CCD or CMOS camera. A series of line gratingimages received from CCD camera is processed in an optical image processunit 240. These images are taken while the SORIL system is performingsurface inspection. The optical image processing unit 240 compares theposition of the line grating on these optical images and calculates theheight variation of each image that caused by surface topology thenpasses the result to control signal generating unit 250. The local focusvariation of the electron inspection image is corresponding to thesurface height variation due to topology. The control signal generatingunit 250 intrinsically is a high speed computer, based on the focusvariation converted from each image, so the computer will decide ifthese variations are within the acceptable depth of focus. If it is notacceptable then the computer calculates correction actions controlsignal for the controlled objective. For example, calculates thepiezo-voltage for stage motion control, calculates electrostatic lensstrength for control electrodes and the voltage bias that apply to thespecimen surface. Finally the correction signal is sent to thecontrolled objective through the control driver 260.

As most of the prior arts disclosed, in order to have a sharp image fordefects inspection, the correct signal converted from height variationwere sent to activate stage motion in the direction of light axis forcompensating the focus deviation due to surface topology. However,according to Zhang disclosed in U.S. patent application Ser. No.12/397,042 filed in Mar. 3, 2009, the motion of the stage is one of themost significant noise sources that interfering the sharpness of animage. Therefore, in order to have a quality inspection image, themotion of stage during micro focus deviation compensation should beavoided as possible,

According to one embodiment of the present invention illustrates in FIG.2A, the control signal for the control driver 261 is sent to vary thespecimen surface bias instead of stage motion. Varying the specimen biaswill alter the landing energy of the primary beam, thereafter varies theprimal focus length that originally set by the objective lens 130. Theoptical image processing unit 240 compares the position of the linegrating on these optical images and calculates the height variation ofeach image that caused by surface topology then passes the result tocontrol signal generating unit 251. The control signal generating unit251, base on the focus variation of each image, decides if thesevariations are within the acceptable depth of focus or not. The controlsignal generating unit 251 calculates the surface bias needed to applyon the specimen surface and passes the signal to the control driver 261.The calculation, as shown in FIG. 2B, also includes a scanningcorrection after the new surface bias calculated 251-1 is implemented.The scanning correction calculation 251-2 includes image rotationcompensation 251-2 a, image magnification compensation 251-2 b, andprimary beam shift compensation according to the new surface bias 251-2c. The control driver 261 send out control signal to vary the wafersurface bias that could bring the off-focused electron beam image due tosurface topology back to acceptable DOF.

FIG. 3 illustrates another embodiment of the present invention. Thecontrol signal for the control driver 262 is sent to vary theelectrostatic field strength of the control electrode 134 instead ofstage motion. The control electrode 134, which is a single plate with acentral hole to allow the primary beam passing therethrough, is actingas an electrostatic lens between the objective lens and specimensurface. Varying the electrostatic field strength of control electrode134 will alter the primal focus length that originally set by theobjective lens. The optical image processing unit 240 compares theposition of the line grating on these optical images and calculates theheight variation of each image that caused by surface topology thenpasses the result to control signal generating unit 252. The controlsignal generating unit 252, based on the focus variation of each image,decides if these variation are within the acceptable depth of focus ornot. The control signal generating unit 252 calculates the voltage thatneeds to apply on the control electrode 134 for the proper electrostaticfield strength and passes the signal to the control driver 262. Thecalculation, as shown in FIG. 3B, also includes a scanning correctionafter the new electrostatic field strength calculated 252-1 is applied.The scanning calculation correction 252-2 includes image rotationcompensation 252-2 a, image magnification compensation 252-2 b, andprimary beam shift compensation according to the new electrostatic fieldstrength 252-2 c. The control driver 262 sends out control signals tovary the voltage of the control electrode 134 that could bring theoff-focused electron beam image due to surface topology back toacceptable DOF.

The control electrode 134, or the control electrostatic lens, could bepresented between the objective lens and specimen surface in many forms.In present invention, for example, the control electrode 134 is on theextension of outer pole piece of the SORIL lens. One embodiment suggeststhat position the control electrostatic lens as one pair of deflectorelectrodes. The benefit of this configuration is that could have morecompact structure due to the dual function design.

Although specific embodiments of the present invention have beendescribed, it will be understood by those of skill in the art that thereare other embodiments that are equivalent to the described embodiments.Accordingly, it is to be understood that the invention is not to belimited by the specific illustrated embodiments, but only by the scopeof the appended claims.

What is claimed is:
 1. A device for dynamic measuring height variationof a specimen to be inspected by a tool, comprising: an opticalilluminating source for emitting light on the specimen; a detecting unitfor receiving light reflected from the specimen; means for calculatingfocus of the tool; means for calculating bias of the specimen surfaceand scanning compensation; and means for controlling bias of thespecimen surface.
 2. The device for dynamic measuring height variationaccording to claim 1, further comprising an optical system for theoptical illuminating source and the detecting unit.
 3. The device fordynamic measuring height variation according to claim 1, wherein themeans for calculating bias of the specimen surface and scanningcompensation includes: image rotation compensation; image magnificationcompensation; and primary beam shift compensation.
 4. An electron beamsystem, comprising: an electron source for emitting a primary beam; acondenser lens for condense the primary beam; an objective lens forfocusing the primary beam on a surface of a specimen; and means formeasuring height variation of the specimen; wherein the means formeasuring height variation of the specimen comprises an opticalilluminating source for emitting light on the specimen, a detecting unitfor receiving light reflected from the specimen, and means for varyinglanding energy of the primary beam.
 5. The electron beam systemaccording to claim 4, wherein the means for varying landing energy ofthe primary beam comprises: means for calculating focus of the tool;means for calculating bias of the specimen surface and scanningcompensation; and means for controlling bias of the specimen surface. 6.The electron beam system according to claim 5, wherein the means forcalculating bias of the specimen surface and scanning compensationincludes: image rotation compensation; image magnification compensation;and primary beam shift compensation.
 7. The electron beam systemaccording to claim 4, wherein the means for varying landing energy ofthe primary beam comprises: means for calculating focus of the tool;means for calculating electrostatic strength of a control electrode andscanning compensation; and means for controlling electrostatic strengthof the control electrode.
 8. The electron beam system according to claim7, wherein the means for calculating electrostatic strength of a controlelectrode and scanning compensation includes: image rotationcompensation; image magnification compensation; and primary beam shiftcompensation.
 9. The electron beam system according to claim 4, furthercomprising an optical system for the optical illuminating source and thedetecting unit.
 10. The electron beam system according to claim 4,further comprising a deflection unit for deflecting the primary beam andscanning on the specimen.
 11. The electron beam system according toclaim 10, further comprising a detector for receiving signal electronsfrom the specimen.
 12. The electron beam system according to claim 11,further comprising a control electrode, between the objective lens andthe specimen, on extension of outer pole pieces of the objective lens.13. A device for adjusting focus of an electron beam in a scanningelectron microscope (SEM), said device comprising: an optical heightdetection unit for detecting a surface of a specimen to be inspected bythe SEM and outputting signals of height variation information; a SEMfocus control unit for receiving the signals of height variationinformation, calculating focus, and outputting signals of focusadjusting information; and a SEM focusing unit for focusing the electronbeam of the SEM on the surface of the specimen according to the signalsof focus adjusting information, wherein said SEM focusing unit isselected from the group consisting of means for adjusting bias of thespecimen's surface, a control electrostatic lens, and a condenser lens,the control electrostatic lens being a plate with a central hole toallow passage of a primary beam of the SEM therethrough, wherein thecontrol electrode lens is under an objective lens of the SEM.